Search results for "Metallic bonding"
showing 6 items of 6 documents
Adhesion trends and growth mode of ultra-thin copper films on MgO
2004
Ab initio simulations are performed for Cu atoms adsorbed on the perfect MgO(001) substrate, with an ordered metal coverage varied from 1 monolayer (ML), i.e. almost single atoms, up t o1M L. As trong dependence of the adhesion energy and the sub-monolayer film distance from the substrate on the surface coverage and adsorbate positions (Mg 2+ or O 2− )i s discussed. The nature of interfacial bonding at all coverages is physisorption .W hen increasing Cu atomic fraction, a decrease of the substrate-induced polarization of adatoms accompanied by an increase of both in-plane metallic bonding and the interfacial distance has been found. Combining results of ab initio calculations with thermodyn…
Diastereoselective Insertion of Isocyanide into the Alkyl−Metal Bond of Methylbenz[ e ]indenyl ansa ‐Zirconocene Complexes
2004
Alkylation of ansa-zirconocene [Zr{(η5-C5H5)SiMe2(MBI)}Cl2] (MBI = η5-2-Me−C13H7) with MgRCl gave the dimethyl complex [Zr{(η5-C5H5)SiMe2(MBI)}Me2], but unresolvable mixtures containing mono-alkylated compounds were obtained when bulkier alkyls were used. However pure dialkyl complexes [Zr{(η5-C5H5)SiMe2(MBI)}R2] (R = CH2Ph, CH2SiMe3) were easily obtained using K(CH2Ph) and Li(CH2SiMe3) as alkylating agents. Diastereoselective insertion into the MBI-unprotected Zr−R bond was observed when all of these dialkyl complexes were treated with 2,6-xylyl isocyanide to give the iminoacyl compounds [Zr{(η5-C5H5)SiMe2(MBI)}R{CR[η2-N-(2,6-xylyl)]}] (R = Me, CH2Ph, CH2SiMe3). All of the new complexes we…
Mössbauer spectroscopic studies of clusters Mn2(CO)8[μ-Sn(hal)Mn(CO)5]2 (hal = Cl, Br) and related Mn and Re compounds
1977
Abstract In order to be acquainted with the nature of bonds at Sn involved in the title compounds, as well as to get information on the configuration of the strictly related derivatives I2Sn2Mn4(CO)18 and Cl2Sn2Re4(CO)18, the Mossbauer spectroscopic investigation reported in this paper has been carried out. The experimental parameters (isomer shifts, δ; nuclear quadrupole splittings, ΔE; for the bromide derivative only, the asymmetry parameter η and the sign of the nuclear quadrupole coupling constant e2qQ) have been discussed in connection with data concerning compounds with tin-transition metal bonds, mainly hal2Sn[Mn(CO)5]2 (hal = Cl, Br) and ClSn[Mn(CO)5]3. Rationalizations of ΔE and η …
A mixed-valence Cu(I)–Cu(II) and metal–metal bond containing coordination polymer obtained from an in situ oxidation reaction route
2006
Abstract A new mixed-valence copper coordination polymer with copper–copper metal bonds in a two-dimensional network was generated from an in situ oxidation reaction route under hydrothermal conditions. The synthesis of this coordination polymer demonstrated that the novel compounds that may not be accessible using the known methods could be synthesized via an oxidation reaction route. The reaction conditions are mild enough to keep the building blocks intact during the oxidation and self-assembly process under hydrothermal conditions.
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.